Complications of Charge Pumping Analysis for Silicon Carbide MOSFETs
نویسندگان
چکیده
Unexpected behavior is observed when charge pumping performed on silicon carbide MOSFETs with a thermally grown dioxide gate dielectric. Supported by experimental evidence, two root causes are proposed: the trap density and channel non-equilibrium. These difficult to overcome experimentally due limitations oxide breakdown doping variation along channel, respectively. A correct interpretation then requires 2D model.
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ژورنال
عنوان ژورنال: Materials Science Forum
سال: 2023
ISSN: ['1422-6375', '0250-9776', '0255-5476', '1662-9752', '1662-9760']
DOI: https://doi.org/10.4028/p-84nz7l